Cost-Effective Gate Replacement Process

ABSTRACT

The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a first gate structure and a second gate structure over a substrate. The first and second gate structures each include a high-k dielectric layer located over the substrate, a capping layer located over the high-k dielectric layer, an N-type work function metal layer located over the capping layer, and a polysilicon layer located over the N-type work function metal layer. The method includes forming an inter-layer dielectric (ILD) layer over the substrate, the first gate structure, and the second gate structure. The method includes polishing the ILD layer until a surface of the ILD layer is substantially co-planar with surfaces of the first gate structure and the second gate structure. The method includes replacing portions of the second gate structure with a metal gate. A silicidation process is then performed to the semiconductor device.

PRIORITY DATA

This application is a divisional application of U.S. application Ser.No. 13/440,848, filed Apr. 5, 2012, which is hereby incorporated byreference in its entirety.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experienced rapidgrowth. Technological advances in IC materials and design have producedgenerations of ICs where each generation has smaller and more complexcircuits than the previous generation. However, these advances haveincreased the complexity of processing and manufacturing ICs and, forthese advances to be realized, similar developments in IC processing andmanufacturing are needed. In the course of integrated circuit evolution,functional density (i.e., the number of interconnected devices per chiparea) has generally increased while geometry size (i.e., the smallestcomponent (or line) that can be created using a fabrication process) hasdecreased.

To enhance the performance of ICs, metal gate transistors have been usedin recent years. However, conventional methods of forming metal gatetransistors may be complex and expensive. For example, the NMOS and PMOSgates may require their own formation processes, which not only increasefabrication costs due to the added complexity, but may also lead topotential process defects and uniformity issues.

Therefore, while existing methods of fabricating metal gate transistorshave been generally adequate for their intended purposes, they have notbeen entirely satisfactory in every aspect.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 is a flowchart illustrating a method of fabricating asemiconductor device according to various aspects of the presentdisclosure; and

FIGS. 2-4 and 5A-9A and 5B-9B illustrate cross-sectional views of thesemiconductor device at various stages of fabrication according to themethod of FIG. 1.

FIG. 5C illustrates a top view of the semiconductor device at variousstages of fabrication according to the method of FIG. 1.

DETAILED DESCRIPTION

It is understood that the following disclosure provides many differentembodiments, or examples, for implementing different features of variousembodiments. Specific examples of components and arrangements aredescribed below to simplify the present disclosure. These are, ofcourse, merely examples and are not intended to be limiting. Forexample, the formation of a first feature over or on a second feature inthe description that follows may include embodiments in which the firstand second features are formed in direct contact, and may also includeembodiments in which additional features may be formed between the firstand second features, such that the first and second features may not bein direct contact. In addition, the present disclosure may repeatreference numerals and/or letters in the various examples. Thisrepetition is for the purpose of simplicity and clarity and does not initself dictate a relationship between the various embodiments and/orconfigurations discussed.

Illustrated in FIG. 1 is a flowchart of a method 20 for fabricating asemiconductor device. FIGS. 2-9 are diagrammatic fragmentarycross-sectional side views, of the semiconductor device during variousfabrication stages. The semiconductor device may include an integratedcircuit (IC) chip, system on chip (SoC), or portion thereof, that mayinclude various passive and active microelectronic devices such asresistors, capacitors, inductors, diodes, metal-oxide semiconductorfield effect transistors (MOSFET), complementary metal-oxidesemiconductor (CMOS) transistors, bipolar junction transistors (BJT),laterally diffused MOS (LDMOS) transistors, high power MOS transistors,or other types of transistors. It is understood that FIGS. 2-9 have beensimplified for a better understanding of the inventive concepts of thepresent disclosure. Accordingly, it should be noted that additionalprocesses may be provided before, during, and after the method 20 ofFIG. 1, and that some other processes may only be briefly describedherein.

Referring to FIG. 1, the method 20 includes a block 22 in which a firstgate structure and a second gate structure are formed over a substrate.The first gate structure and the second gate structure each include ahigh-k dielectric layer located over the substrate, a capping layerlocated over the high-k dielectric layer, an N-type work function metallayer located over the capping layer, and a polysilicon layer locatedover the N-type work function metal layer. The method 20 includes ablock 24 in which an inter-layer dielectric (ILD) layer is formed overthe substrate, the first gate structure, and the second gate structure.The method 20 includes a block 26 in which the ILD layer is polisheduntil a surface of the ILD layer is substantially co-planar withsurfaces of the first gate structure and the second gate structure. Themethod 20 includes a block 28 in which portions of the second gatestructure are replaced with a metal gate. The method 20 includes a block30 in which a silicidation process is performed to the semiconductordevice thereafter.

Referring to FIG. 2, a semiconductor device 35 is fabricated inaccordance with the method 20 of FIG. 1. The semiconductor device 35 hasa substrate 40. The substrate 40 is a silicon substrate doped with aP-type dopant such as boron (for example a P-type substrate).Alternatively, the substrate 40 could be another suitable semiconductormaterial. For example, the substrate 40 may be a silicon substrate thatis doped with an N-type dopant such as phosphorous or arsenic (an N-typesubstrate). The substrate 40 may alternatively be made of some othersuitable elementary semiconductor, such as diamond or germanium; asuitable compound semiconductor, such as silicon carbide, indiumarsenide, or indium phosphide; or a suitable alloy semiconductor, suchas silicon germanium carbide, gallium arsenic phosphide, or galliumindium phosphide. Further, the substrate 40 could include an epitaxiallayer (epi layer), may be strained for performance enhancement, and mayinclude a silicon-on-insulator (SOI) structure.

Referring back to FIG. 2, shallow trench isolation (STI) features 45 areformed in the substrate 40. The STI features 45 are formed by etchingrecesses (or trenches) in the substrate 45 and filling the recesses witha dielectric material. In the present embodiment, the dielectricmaterial of the STI features 45 includes silicon oxide. In alternativeembodiments, the dielectric material of the STI features 45 may includesilicon nitride, silicon oxy-nitride, fluoride-doped silicate (FSG),and/or a low-k dielectric material known in the art. In otherembodiments, deep trench isolation (DTI) features may be formed in placeof, or in combination with, the STI features 45.

Thereafter, an interfacial layer 50 is optionally formed over thesubstrate 40. The interfacial layer 50 is formed by an atomic layerdeposition (ALD) process and includes silicon oxide (SiO₂).

A gate dielectric layer 60 is then formed over the interfacial layer 50.The gate dielectric layer 60 is formed by an ALD process. The gatedielectric layer 60 includes a high-k dielectric material. A high-kdielectric material is a material having a dielectric constant that isgreater than a dielectric constant of SiO₂, which is approximately 4. Inan embodiment, the gate dielectric layer 60 includes hafnium oxide(HfO₂), which has a dielectric constant that is in a range fromapproximately 18 to approximately 40. In alternative embodiments, thegate dielectric layer 60 may include one of ZrO₂, Y₂O₃, La₂O₅, Gd₂O₅,TiO₂, Ta₂O₅, HfErO, HfLaO, HfYO, HfGdO, HfAlO, HfZrO, HfTiO, HfTaO, andSrTiO.

A capping layer 70 is formed over a portion of the gate dielectric layer60. The formation of the capping layer 70 includes one or moredeposition and patterning processes. In some embodiments, the cappinglayer 70 includes a lanthanum oxide material (LaO_(x), where x is aninteger). The LaO_(x) material of the capping layer helps tune a workfunction of an NMOS transistor gate, such that a desired thresholdvoltage may be achieved for the NMOS transistor. It is understood thatthe LaO_(x) material is formed over both an NMOS transistor region and aPMOS transistor region at this stage of fabrication. Suitable materialsfor the capping layer 70 can be rare earth oxides such as LaOx, GdOx,DyOx, or ErOx. The capping layer 70 has a thickness 80. In someembodiments, the thickness 80 is in a range from about 5 Angstroms toabout 20 Angstroms.

A work function layer 90 is formed over the capping layer 70 and thegate dielectric layer 60. In some embodiments, the work function layer90 includes a titanium nitride (TiN) material. The work function layer90 works in conjunction with the capping layer 70 to tune the workfunction of the gate for the NMOS transistor. The work function layer 90has a thickness 100. In some embodiments, the thickness 100 is in arange from about 10 Angstroms to about 50 Angstroms.

Referring to FIG. 3, gate structures 120A-120B are formed. The gatestructure 120A is formed over an NMOS region of the substrate 40, andthe gate structure 120B is formed over a PMOS region of the substrate40. Thus, the gate structure 120A is an NMOS gate, and the gatestructure 120B is a PMOS gate. The gate structures 120A-120B includegate electrodes 130A and 130B, hard masks 140A and 140B, and spacers150A and 150B, respectively. The formation of the gate structures120A-120B may include depositing a gate electrode layer 130 andthereafter patterning the gate electrode layer 130 and the layerstherebelow with patterned hard masks 140A and 140B.

The gate electrode 130A is a functional gate electrode for the gatestructure 120A. The gate electrode 130B is a dummy gate electrode forthe gate structure 120B. In some embodiments, the gate electrodes130A-130B each include a polysilicon material. In some embodiments,before polysilicon material is patterned into the gate electrodes 130Aand 130B, an N-type dopant will be implanted into the polysiliconmaterial. The concentration of the N-type dopant may be relatively high.As such, the gate electrode 130A will be capable of serving as the gateelectrode for an NMOS gate.

The hard masks 140A-140B include a dielectric material, such as siliconoxide or silicon nitride. The gate spacers 150A-150A include adielectric material. In some embodiments, the gate spacers 150A-150Binclude silicon nitride. In alternative embodiments, the gate spacers150A-150B may include silicon oxide, silicon carbide, siliconoxy-nitride, or combinations thereof.

Thereafter, heavily doped source and drain regions 200A and 200B (alsoreferred to as S/D regions) are formed in the NMOS and PMOS portions ofthe substrate 40, respectively. The S/D regions 200A-200B may be formedby an ion implantation process or a diffusion process known in the art.N-type dopants such as phosphorus or arsenic may be used to form theNMOS S/D regions 200A, and P-type dopants such as boron may be used toform the PMOS S/D regions 200B. As is illustrated in FIG. 3, the S/Dregions 200A-200B are aligned with the outer boundaries of the gatespacers 150A-150B, respectively. Since no photolithography process isrequired to define the area or the boundaries of the S/D regions200A-200B, it may be said that the S/D regions 200A-200B are formed in a“self-aligning” manner. One or more annealing processes are performed onthe semiconductor device 35 to activate the S/D regions 200A-200B. It isalso understood that in some embodiments, lightly-doped source/drain(LDD) regions may be formed in both the NMOS and PMOS regions of thesubstrate before the gate spacers are formed. For reasons of simplicity,the LDD regions are not specifically illustrated herein.

Note that no silicidation process is performed at this stage offabrication. In other words, S/D regions 200A-200B have no silicidelayers formed thereon, nor do the gate electrodes 130A-130B. This isdone so that a polishing process performed later will causecontamination, as discussed in more detail below with reference to thepolishing process.

Referring now to FIG. 4, an inter-layer (or inter-level) dielectric(ILD) layer 220 is formed over the substrate 40 and the gate structure220. The ILD layer 220 may be formed by chemical vapor deposition (CVD),high density plasma CVD, spin-on, sputtering, or other suitable methods.In an embodiment, the ILD layer 220 includes silicon oxide. In otherembodiments, the ILD layer 220 may include silicon oxy-nitride, siliconnitride, or a low-k material.

Referring to FIG. 5A, a polishing process 230 (for example achemical-mechanical-polishing (CMP) process) is performed on the ILDlayer 220 to remove portions of the ILD layer 220. The polishing isperformed until a top surface of the dummy gate electrodes of gatestructures 120A-120B is exposed. The hard masks 140A-140B are alsoremoved by the polishing process 230.

As discussed above, no silicide features are formed on the gateelectrodes 130A-130B. This is done so that the polishing process 230 canbe performed without causing contamination. In more detail, had silicidefeatures (e.g., NiSi) been formed on the gate electrodes 130A-130B, apolishing pad used in the polishing process 230 will likely spread thesilicide particles elsewhere on the wafer surface as the polishing padgrinds away the electrodes 130A-130B. The silicide particles maycontaminate other regions of the wafer and are therefore undesirable.Here, since no silicide features are formed on the gate electrodes130A-130B, the polishing pad of the polishing process 230 can grind awayat the surfaces of the gate electrodes 130A-130B without spreadingsilicide particles to other regions of the wafer, thereby reducingsilicide contamination. According to various aspects of the presentdisclosure, the silicide formation process will be moved to a laterfabrication stage.

Following the polishing process 230, the top surfaces of the gatestructures 120A-120B are substantially co-planar with the top surface ofthe ILD layer 220 on either side of the gate structures 120A-120B. Thepresence of the dummy gate electrode 130B helps reduce a loading effectduring the polishing process 230, since the height of the gate structure120B is substantially the same as the height of the gate structure 120A.

To provide more clarity and detail of the fabrication process, adiagrammatic fragmentary cross-sectional side view of the semiconductordevice 35 taken in a different direction is shown in FIG. 5B, and adiagrammatic fragmentary top view of the semiconductor device 35 isshown in FIG. 5C. Specifically, the cross-sectional view of FIG. 5A istaken along the dashed lines A-A′ of the top view of FIG. 5C, and thecross-sectional view of FIG. 5B is taken along the dashed lines B-B′ ofthe top view of FIG. 5C. As is shown in FIGS. 5A and 5C, the gateelectrodes 130A and 130B are NMOS and PMOS gate electrodes,respectively, where they are spaced apart from each other. As is shownin FIGS. 5B and 5C, the gate electrodes 130A and 130C are NMOS and PMOSgate electrodes, respectively, where they are bordering or abutting eachother.

FIGS. 6A-9A and 6B-9B are also different cross-sectional side views(similar to the cross-sectional side views of FIGS. 5A-5B) correspondingto subsequent fabrication stages. The top views of these fabricationstages are not illustrated for the sake of simplicity, however.Referring now to FIGS. 6A-6B, a patterned photoresist mask 250 is formedover the NMOS transistor, so that the PMOS transistor is exposed. Theformation of the patterned photoresist mask 250 may involve one or morespin coating, exposing, developing, baking, and rinsing processes (notnecessarily performed in that order). Thereafter, an etching process 260(for example a dry etching process) is performed to remove the PMOSdummy gate electrodes 130B-130C as well as portions of the work functionlayer 90B-90C and the capping layer 70B-70C, thereby forming openings ortrenches 270 and 271. The photoresist mask 250 is subsequently removedusing a stripping or ashing process.

Referring to FIGS. 7A-7B, a metal gate deposition process 280 isperformed to deposit metal gate electrodes 290B and 290C in the openings270 and 271, respectively. The metal gate electrodes 290B and 290Cinclude work function layers 300B-300C, blocking layers 310B-310C, andfill metal layers 320B-320C, respectively. The work function layers300B-300C help tune a work function of the PMOS gate, such that adesired threshold voltage may be achieved for the PMOS transistor. Insome embodiments, the work function layers 300B-300C include a P-typework function metal, which may contain titanium nitride (TiN), tungsten(W), tungsten nitride (WN), or tungsten aluminum (WA1) as examples.

The blocking layers 310B-310C are configured to block or reducediffusion between the layer therebelow (e.g., the work function metallayer 300) and the layer thereabove (e.g., the fill metal layer 320). Insome embodiments, the blocking layer 310B-310C includes TiN or tantalumnitride (TaN).

The fill metal layers 320B-320C are configured to serve as the mainconductive portion of the PMOS gate electrode. In some embodiments, thefill metal layers 320B-320C contain aluminum (Al) or titanium (Ti). Thefill metal layers 320B-320C may alternatively contain other conductivematerials such as tungsten (W), copper (Cu), or combinations thereof. Inother embodiments, a wetting layer (e.g., containing Ti) may be formedbetween the blocking layer and the fill metal layer.

It can be seen now that the semiconductor device 35 includes an NMOStransistor that has a polysilicon gate electrode (e.g., the gateelectrode 130A), as well as a PMOS transistor that has a metal gateelectrode (e.g., the gate electrode 290B or 290C). As such, thesemiconductor device 35 may be referred to as a hybrid gatesemiconductor device. The NMOS transistor is formed by a gate-firstprocess, and the PMOS transistor is formed by a gate-last process.

Referring to FIGS. 8A-8B, an inter-layer dielectric (ILD) layer 350 isformed over the ILD layer 220 and over the gate electrodes 130A and290B-290C. The ILD layer 220 may be formed by a suitable depositionprocess known in the art. The ILD layer 350 may contain a substantiallysimilar material as the ILD layer 220.

A plurality of contact holes 360-367 are formed in the semiconductordevice 35. The contact holes 360-367. In some embodiments, the contactholes 360-367 are formed by an etching process known in the art. Thecontact holes 360-363 extend vertically through the ILD layers 220 and350 and expose surfaces of the S/D regions 200A-200B in the substrate.The contact holes 364-367 extend vertically through the ILD layer 220and expose surfaces of the polysilicon gate electrode 130A.

Thereafter, a silicidation process is performed to form silicidefeatures 380-385 below the openings 360-364 and 366, respectively. Thesilicidation process may involve depositing a metal material in theregions of the semiconductor device 35 exposed by the contact holes360-367 and performing a thermal process so that the deposited metalwill reach with silicon to form metal silicide features. The silicidefeatures 380-383 are formed in the S/D regions 200A-200B, and thesilicide features 384-385 are formed in the polysilicon electrode 130A.In some embodiments, the silicide features 380-385 are nickel silicide(NiSi) features.

Referring now to FIGS. 9A-9B, a plurality of metal contacts 390-397 isformed to fill the contact holes 360-367. The metal contacts 390-397 maybe formed by a suitable deposition process followed by a polishingprocess to planarize the surfaces of the metal contacts 390-397. In someembodiments, the metal contacts 390-397 contain tungsten. The metalcontacts 390-394 and 396 are formed on the silicide features 360-364 and366, respectively. The metal contacts 390-393 provide electrical access(or electrical coupling) to the S/D regions of the NMOS and PMOStransistors, and the metal contacts 394-397 provide electrical access tothe gate electrodes of the NMOS and PMOS transistors.

It is understood that additional processes may be performed to completethe fabrication of the semiconductor device 35. For example, theseadditional processes may include deposition of passivation layers,formation of interconnect structures (e.g., lines and vias, metallayers, and interlayer dielectric that provide electricalinterconnection to the device including the formed metal gate),packaging, and testing. For the sake of simplicity, these additionalprocesses are not described herein. It is also understood that some ofthe fabrication processes for the various embodiments discussed abovemay be combined depending on design needs and manufacturingrequirements.

Based on the above discussions, it can be seen that the presentdisclosure offers advantages over conventional methods. It isunderstood, however, that other embodiments may offer additionaladvantages, and not all advantages are necessarily disclosed herein, andthat no particular advantage is required for all embodiment.

One advantage is that an extra dry etching process may be saved (i.e.,no longer needed). In traditional gate replacement fabricationprocesses, the NMOS and PMOS dummy gate electrodes are removedseparately. In other words, one dry etching process is used to removethe dummy gate electrode for the PMOS transistor, and a different dryetching process is used to remove the dummy gate electrode for the NMOStransistor. Each dry etching process may involve a plurality of processsteps and may require the use of expensive fabrication tools. Therefore,it is desirable to reduce or eliminate the use of dry etching processesif possible. According to the embodiments of the present disclosure,only one dry etching process is used (to remove the dummy gate electrodefor the PMOS transistor). The polysilicon gate electrode of the NMOStransistor is no longer a dummy gate and therefore need not be removed.Therefore, the present disclosure allows for simpler and cheaperfabrication compared to conventional fabrication methods.

Another advantage is that the embodiments of the present disclosureentail a single polishing process to planarize the metal gate electrodesurface, rather than two separate polishing processes as in conventionalfabrication. As discussed above, the conventional metal gate fabricationmethods form the metal gates separately. In more detail, after the PMOSdummy gate electrode is removed, a plurality of deposition processes areperformed to form a PMOS work function metal component and a fill metalcomponent as the PMOS metal gate electrode in place of the PMOS dummygate electrode. A polishing process such as a CMP process is thenperformed to planarize the PMOS metal gate electrode surface. When thisis completed, similar procedures are performed to form an NMOS metalgate electrode in place of the NMOS dummy gate electrode, and anotherpolishing process is then performed to planarize the NMOS metal gateelectrode surface. Therefore, two separate polishing processes areneeded for existing metal gate fabrication methods: one to polish thePMOS metal gate, and another to polish the NMOS metal gate.

In comparison, according to the embodiments of the present disclosure,only the PMOS transistor has a metal gate and therefore needs apolishing process. The NMOS transistor has a polysilicon gate andtherefore does not need to be polished. In other words, according to thepresent disclosure, only a single polishing process is performed toplanarize the surface of the PMOS metal gate electrode. Consequently, anextra polishing process (i.e., the polishing process that would havebeen required to polish the metal gate for NMOS transistor under atraditional fabrication process) can be eliminated, further reducingfabrication costs and shortening process time.

Therefore, it can be seen that the present disclosure pertains toforming a hybrid high-k metal gate, in that the NMOS transistor containsa polysilicon gate electrode, while the PMOS transistor contains a metalgate electrode. In addition, it is understood that although the variousconcepts of the present disclosure discussed above are illustrated usinga planar hybrid high-k metal gate device, these concepts apply to aFinFET device as well. A typical FinFET device is fabricated with a thin“fin” (or fin-like structure) extending from a substrate. The finusually includes silicon and forms the body of the transistor device.The channel of the transistor is formed in this vertical fin. A gate isprovided over (e.g., wrapping around) the fin. This type of gate allowsgreater control of the channel. Other advantages of FinFET devicesinclude reduced short channel effect and higher current flow. Forreasons of simplicity, the details of the fabrication of the FinFETdevices are not discussed herein.

One of the broader forms of the present disclosure involves a method offabricating a semiconductor device. The method includes: forming a firstgate structure and a second gate structure over a substrate, the firstgate structure and the second gate structure each including a high-kdielectric layer located over the substrate, a capping layer locatedover the high-k dielectric layer, an N-type work function metal layerlocated over the capping layer, and a polysilicon layer located over theN-type work function metal layer; forming an inter-layer dielectric(ILD) layer over the substrate, the first gate structure, and the secondgate structure; polishing the ILD layer until a surface of the ILD layeris substantially co-planar with surfaces of the first gate structure andthe second gate structure; replacing portions of the second gatestructure with a metal gate; and thereafter performing a silicidationprocess to the semiconductor device.

In some embodiments, the performing the silicidation process comprises:forming a plurality of contact holes in the semiconductor device;depositing a metal material through the contact holes; and performing athermal treatment to the metal material to form a plurality of silicidefeatures exposed by the contact holes.

In some embodiments, the method further comprises: before the formingthe ILD layer, forming source/drain regions in the substrate, andwherein: a first subset of the contact holes exposes the source/drainregions; and a second subset of the contact holes exposes the metal gateand the polysilicon layer of the first gate structure.

In some embodiments, the method further comprises: after the silicidefeatures are formed, filling the contact holes with a plurality of metalcontacts.

In some embodiments, the replacing portions of the second gate structureis performed in a manner such that the polysilicon layer, the N-typework function metal layer, and the capping layer of the second gatestructure are removed and replaced by the metal gate.

In some embodiments, the replacing portions of the second gate structureis performed in a manner such that the high-k dielectric layer of thesecond gate structure is un-removed, and wherein the metal gate isformed over the un-removed high-k dielectric layer.

In some embodiments, the replacing portions of the second gate structurecomprises: forming a P-type work function metal layer on the un-removedhigh-k dielectric layer; forming a blocking metal layer on the P-typework function metal layer; and forming a fill metal layer on theblocking metal layer.

In some embodiments, no silicidation process is performed to thesemiconductor device before the forming the ILD layer.

In some embodiments, the high-k dielectric layer has a dielectricconstant greater than that of silicon dioxide; and the capping layercontains lanthanum oxide.

Another one of the broader forms of the present disclosure involves amethod of fabricating a semiconductor device. The method includes:forming a high-k dielectric layer over a substrate; forming a cappinglayer over the high-k dielectric layer; forming a work function layerover the capping layer; forming a polysilicon layer over the workfunction layer; patterning the polysilicon layer, the work functionlayer, the capping layer, and the high-k dielectric layer to form afirst gate and a second gate; forming an inter-layer dielectric (ILD)layer over the substrate, the ILD layer surrounding the first gate andthe second gate; removing, from the second gate, the polysilicon layer,the work function layer, and the capping layer, thereby forming anopening in the second gate; forming a metal gate electrode in theopening, thereby forming a functional high-k metal gate; thereafterforming a plurality of contact holes in the semiconductor device; andforming a plurality of silicide features in portions of thesemiconductor device exposed by the contact holes.

In some embodiments, the method further comprises: after the forming thesilicide features, forming a plurality of metal contacts to fill thecontact holes.

In some embodiments, the first gate and the second gate are free ofhaving a silicide feature formed thereon before the forming the ILDlayer.

In some embodiments, the forming the ILD layer includes: depositing adielectric material over the substrate, the first gate, and the secondgate; and polishing the dielectric material until the polysilicon layersof the first gate and the second gate are exposed.

In some embodiments, the first gate is a functional polysilicon gate foran NMOS transistor; and the second gate is a dummy gate for a PMOStransistor.

In some embodiments, the work function layer contains an N-type workfunction metal; and the metal gate electrode contains a P-type workfunction metal.

In some embodiments, the high-k gate dielectric has a dielectricconstant greater than that of silicon dioxide; and the capping layercontains lanthanum oxide.

Yet another one of the broader forms of the present disclosure involvesa semiconductor device. The semiconductor device includes: a substrate;an NMOS gate disposed over the substrate, wherein the NMOS gateincludes: a first high-k gate dielectric, a capping layer disposed overthe first high-k gate dielectric, and an N-type work function metaldisposed over the capping layer, and a polysilicon gate electrodedisposed over the N-type work function metal, wherein the capping layerand the N-type work function metal are configured to collectively tune awork function of the NMOS gate; and a PMOS gate disposed over thesubstrate and adjacent to the NMOS gate, wherein the PMOS gate includes:a second high-k gate dielectric, and a P-type metal gate electrodedisposed over the second high-k gate dielectric, wherein the a portionof the P-type metal gate electrode is configured to tune a work functionof the PMOS gate.

In some embodiments, the P-type metal gate electrode includes: a P-typework function metal disposed on the second high-k gate dielectric,wherein the P-type work function metal is the portion of the P-typemetal gate electrode configured to tune the work function of the PMOSgate; a blocking layer disposed on the P-type work function metal; and afill metal disposed on the blocking layer.

In some embodiments, the high-k gate dielectric has a dielectricconstant greater than that of silicon dioxide.

In some embodiments, the capping layer contains lanthanum oxide; and theN-type work function metal contains titanium nitride.

The foregoing has outlined features of several embodiments so that thoseskilled in the art may better understand the detailed description thatfollows. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor device, comprising: a substrate;an NMOS gate disposed over the substrate, wherein the NMOS gateincludes: a first high-k gate dielectric, a capping layer disposed overthe first high-k gate dielectric, and an N-type work function metaldisposed over the capping layer, and a polysilicon gate electrodedisposed over the N-type work function metal, wherein the capping layerand the N-type work function metal are configured to collectively tune awork function of the NMOS gate; and a PMOS gate disposed over thesubstrate and adjacent to the NMOS gate, wherein the PMOS gate includes:a second high-k gate dielectric, and a P-type metal gate electrodedisposed over the second high-k gate dielectric, wherein a portion ofthe P-type metal gate electrode is configured to tune a work function ofthe PMOS gate.
 2. The semiconductor device of claim 1, wherein theP-type metal gate electrode includes: a P-type work function metaldisposed on the second high-k gate dielectric, wherein the P-type workfunction metal is the portion of the P-type metal gate electrodeconfigured to tune the work function of the PMOS gate; a blocking layerdisposed on the P-type work function metal; and a fill metal disposed onthe blocking layer.
 3. The semiconductor device of claim 1, wherein thehigh-k gate dielectric has a dielectric constant greater than that ofsilicon dioxide.
 4. The semiconductor device of claim 1, wherein: thecapping layer contains lanthanum oxide; and the N-type work functionmetal contains titanium nitride.
 5. The semiconductor device of claim 1,further comprising: a silicide feature disposed on the polysilicon gateelectrode; and a metal contact physically contacting the silicidefeature.
 6. The method of claim 1, wherein the PMOS gate is without thecapping layer.
 7. A device comprising: a first gate stack having a firstconductivity type disposed over a substrate, the first gate stackincluding: a high-k dielectric layer; a capping layer disposed over thehigh-k dielectric layer; a first work function metal layer having thefirst conductivity type disposed over the capping layer; a polysiliconlayer disposed over the first work function metal layer; a second gatestack having a second conductivity type that is opposite the firstconductivity type disposed over the substrate, the second gate stackincluding: the high-k dielectric layer; a second work function metallayer having the second conductivity type disposed over the high-kdielectric layer; a blocking layer disposed over the second workfunction metal layer; and a silicide feature disposed over thepolysilicon layer of the first gate stack; and a first contact and asecond contact; wherein the first contact physically contacts thesilicide feature and the second contact physically contacts a portion ofthe blocking layer.
 8. The device of claim 7, wherein the blocking layeris u-shaped.
 9. The device of claim 7, wherein the second work functionmetal layer is u-shaped.
 10. The device of claim 7, wherein the secondgate stack further includes a fill metal layer disposed within a recessdefined by the blocking layer.
 11. The device of claim 10, wherein thesecond contact physically contacts the fill metal layer.
 12. The deviceof claim 7, wherein a portion of a top surface of the polysilicon layerof the first gate stack is substantially coplanar with a top surface ofthe second work function metal layer.
 13. The device of claim 7, whereinthe second gate stack is without the polysilicon layer and the cappinglayer.
 14. The device of claim 7, wherein the blocking layer includesone of titanium nitride (TiN) or tantalum nitride (TaN).
 15. A devicecomprising: a first gate stack having a first conductivity type disposedover a substrate, the first gate stack including: a high-k dielectriclayer; a capping layer disposed over and physically contacting thehigh-k dielectric layer; a first work function metal layer disposed overand physically contacting the capping layer; a polysilicon layerdisposed over and physically contacting the first work function metallayer; a second gate stack having a second conductivity type that isopposite the first conductivity type disposed over the substrate, thesecond gate stack including: the high-k dielectric layer; a second workfunction metal layer disposed over and physically contacting the high-kdielectric layer, wherein the second work function metal layer has au-shaped profile defining a first recess; a blocking layer disposedwithin the first recess and physically contacting the second workfunction metal layer; wherein the blocking layer has a u-shaped profiledefining a second recess; and a fill metal material disposed within thesecond recess and physically contacting the blocking layer; a silicidefeature disposed over the polysilicon layer of the first gate stack; anda first contact and a second contact; wherein the first contactphysically contacts the silicide feature and the second contactphysically contacts a portion of the blocking layer and the fill metalmaterial.
 16. The device of claim 15, wherein the second work functionmetal layer, the blocking layer, and the fill metal material havesubstantially coplanar top surfaces facing away from the substrate. 17.The device of claim 15, wherein the polysilicon layer of the first gatestack has a top surface that is substantially coplanar with the topsurfaces of the second work function metal layer, the blocking layer,and the fill metal material.
 18. The device of claim 15, wherein thefirst work function metal layer and the second work function meal layerboth include titanium nitride.
 19. The device of claim 15, wherein thefirst conductivity type is n-type and the second conductivity type isp-type.
 20. The device of claim 15, wherein the second contact does notphysically contact the second work function metal layer.